A Novel Punch through Breakdown Trench MOS with Self-Adjustable Resistor for Low Temperature Coefficient of Breakdown Voltage

Abstract

In this paper, a novel punch through breakdown trench MOS with self-adjustable resistor (SAR-PT-TMOS) is proposed for low temperature coefficient of breakdown voltage. The SAR-PT-TMOS features a P-doping self-adjustable resistor (SAR) which is connected to the source electrode and sandwiched by the trench gate and N-source region. As the temperature increases, the width of space charge region between the P-SAR region and the N-source region decreases, which further increases the width of SAR and decreases the resistance of SAR. Therefore, the voltage drop across SAR has a negative temperature coefficient and provides a negative feedback voltage for the breakdown voltage. As a result, the temperature coefficient of breakdown voltage can be reduced by 94.7% compared with that of the conventional punch through breakdown trench MOS (PTTMOS) with only 12.7% increment of on-state voltage drop.