Abstract
The paper discusses the various factors that influence the efficiency of ion mixing. It was found that in the base of penetration of atoms multilayer films in polycrystalline substrate is the process of energy transfer from ions and primary knocked-on atom (PKA) of films to subsequent displacement cascade. At the same time the penetration of implanted atoms to great depths determined by the density of defects, radiation-stimulated migration of interstitial atoms and their physico-chemical interaction with the atoms of the matrix, which can be described by the model of an isotropic mixing. It is shown that doping atoms of the multilayer films, possibly the formation of gradient layers, which are determined by radiation traces in the substrate implanted atoms and their migration under irradiation by the ion beam with a broad energy spectrum.
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