Modification of thin oxide films on Be, Si, Al, Ti, Zr, and W under bombardment by He+ and Ar+ ion beams with a broad energy spectrum

Abstract

Data on the distribution of Be, Al, Ti, Fe, Cu, Zr, Mo, and W atoms implanted in oxide film on metal substrates by ion mixing under the action of He+ and Ar+ ion beams with a broad energy spectrum, with average energy of 10 keV, and with radiation doses up to 1 × 1021 ion/cm2 are presented. It is shown that layers with different concentration gradients of implanted atoms form in a thin oxide layer due to simultaneous implantation, but their concentration decreases dramatically to the background value at the oxide-metal interface. Analysis of experimental data suggests that the migration of implanted atoms takes place by means of the diffusion mechanism and is determined by the parameters of physicochemical interaction of implanted atoms with substrate atoms.