Abstract
The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.
Highlights
Silicon carbide SiC is a wide-band semiconductor material promising for high-power, hightemperature and radiation-resistant electronic devices
The characteristics of localized states in the band gap (BG) of radiation defects (RD) induced by high-energy particles and their effect on properties of material depend on the type of particle and on the mode of irradiation [1,2,3]
The study of the effect on the properties of RD in the ceramic SiC is difficult and leads to ambiguous results owing to its complex structural hierarchy and high content of impurities and biographical defects (BD)
Summary
Silicon carbide SiC is a wide-band semiconductor material promising for high-power, hightemperature and radiation-resistant electronic devices. The band gap (BG) of SiC depending on the polytype varies in range 2.83–3.23 eV, and the threshold energy of defect formation it is 25–35 eV, that defines the high radiation resistance of the material. The characteristics of localized states in the BG of radiation defects (RD) induced by high-energy particles and their effect on properties of material depend on the type of particle and on the mode of irradiation [1,2,3]. The study of the effect on the properties of RD in the ceramic SiC is difficult and leads to ambiguous results owing to its complex structural hierarchy and high content of impurities and biographical defects (BD).
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