Abstract
The paper is focused on the study of the boron doping effect on the electrical characteristics, on the mechanism of charge carrier transfer, and on the energy spectrum of the localized defect states in the polycrystalline diamond films (PDF) deposited from an abnormal glow discharge. PDF doping enables to form the semiconductor layers of p-type conductivity, which have as good properties as those of PDF produced by the alternative methods. The doping reduces the degree of disorder in the film material brought by the growth defects, which determine the film electrical characteristics and electrotransfer mechanism. The PDF electrical characteristics and electrotransfer mechanism are determined by the defects of different nature, whose band gap energy levels have a continuous energy distribution. A p-type activation component is realized in the exchange of charge carriers between the valence band and shallow acceptor levels with the activation energy of 0.013-0.022 eV. Doping increases the effect of the hopping mechanism of the conductivity involving the localized states with a density of (1-6)·1020 eV-1 •cm-3 distributed near the Fermi level, which is in the low half of the band gap.
Highlights
The unique chemical, mechanical, electrical and thermophysical, optical and photoelectrical properties of a diamond contribute to its wide application in high-frequency and high-temperature electronics [1,2,3,4,5]
Current voltage characteristic (CVC) I(U), field dependence of K(U) and carrier transfer energy characteristics 0, T0, 0, N(EF), and IPhTSC in the undoped low-conductivity (σ=10–14–10–4 S) films deposited on the silicon substrate or separated from it vary in thickness and polycrystalline diamond films (PDF) deposition plane, due to the inhomogeneity of the PDF properties
The CVC and K(U) characteristics are determined by the inhomogeneous spatial distribution of the energy barrier that exists on the border of PDF with the electrodes and on the intercrystallite boundaries [8, 9, 12, 17, and 18]
Summary
The unique chemical, mechanical, electrical and thermophysical, optical and photoelectrical properties of a diamond contribute to its wide application in high-frequency and high-temperature electronics [1,2,3,4,5]. Doping with B atoms with a concentration of 1017– 3∙1021 cm–3 causes the high-conductivity layers of p–type with σ=10–10–3∙102 S·cm–1 [1, 7, and 13–16] and with the altered optical properties [1, 2, 17]. The use of such doped layers makes it possible to significantly increase the photoelectrical characteristics of the devices [1, 17,18,19,20]. The features of the formed polycrystalline structure of the films and the content of the growth defects influence the electrical characteristics of the deposited semiconductor layers
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