Abstract
Bi 3.54 Nd 0.46 Ti 3 O 12 (BNdT) thin films have been deposited on p-type Si(100) substrates by a sol-gel method. The microstructures of the film were examined by X-ray diffractometer and scanning electron microscope. The C-V characteristic hysteresis curves show that the metal/ferroelectric/semiconductor structure has memory effect. The fixed charge density (Nfc), surface state density (Nss) and activation energies (Ea1 and Ea2) were also calculated by using a high-low frequency method and thermally stimulated currents measurement. The calculated Nfc,Nss, E a1 and E a2 values were 2.9 × 10 11 cm −2 , 1 × 10 12 cm −2 eV −1 , 1.16 eV and 0.04 eV, respectively. From the results, it is expected that the BNdT films have promising applications as ferroelectric field effect transistor for nonvolatile ferroelectric random access memories.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
