Abstract
Bi3.15Pr0.85Ti3O12 thin films have been grown on a p-type Si(111) substrate by the method of metalorganic sol decomposition and spin coating. The optimum temperature of crystallization is 680°C. Atomic force microscopy reveals that the films have a dense, smooth surface. The electrical measurements were conducted on a metal–ferroelectric–insulator–semiconductor capacitor. The films exhibit good insulating property at room temperature. The clockwise hysteresis curves observed show that the films have a memory effect. The fixed charge density and the surface state density were also calculated. The results show that the films have promising applications as the ferroelectric field effect transistor memories.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
