Abstract
Polycrystalline Bi 3.15 Sm 0.85 Ti 3O 12 (BST) thin films having perovskite structure were fabricated on p-type Si(1 0 0) substrates by a sol–gel spin coating process. Apparent clockwise hysteresis of capacitance-voltage ( C– V) curves for BST thin film on p-type Si(1 0 0) as the ferroelectric hysteresis was observed. The fixed charge density ( N fc) of 4.8×10 11 cm −2 and surface state density ( N ss) of 2.5×10 12 cm −2eV −1 were calculated by the Terman method. Moreover, the leakage current across the ferroelectrics, which is expected to affect the memory window, was measured by a thermally stimulated current (TSC) measurement. By analyzing J L− E 1/2 and J L −1/ T characteristics measured by TSC, the conduction mechanism of the BST/Si(1 0 0) capacitor were found to be dominated by the ferroelectric Schottky emission with a barrier height of 0.58±0.04 eV.
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