Abstract
Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films have been grown on n-type Si (100) substrates by metalorganic decomposition method. The structural properties of the films were examined by x-ray diffraction. The BLT films exhibit good insulating property with room temperature resistivities in the range of 1012–1013 Ω cm. The current–voltage characteristics show ohmic conductivity in the lower voltage range and space-charge-limited conductivity in the higher voltage range. The capacitance–voltage characteristic hysteresis curves show that the metal-ferroelectric-semiconductor structure has memory effect. The fixed charge density and the surface state density were also calculated. The results obtained indicate that the present BLT films are suitable for making ferroelectric field effect transistor memories.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
