Abstract
The transient thermoelectric effects (TTEs) method is used to measure the ambipolar space charge built up in a low-pressure hot wire chemical vapor deposition (HWCVD) technique a-Si:H layer deposited on a glass substrate. The stage 2 TTE-transients yield the trap state density difference with and without bending pressure up to 9 bars. The a-Si:H sample shows a reduction of the negative storage peaks at 0.045 eV and 0.026 eV with increasing pressure, while the positive (hole trap) peak and the zero crossing practically do not change with the pressure. At the maximum bending pressure, the negative peaks are almost zero and shifted into the band gap or toward the conduction band. Our result shows that it is necessary to produce and mount hydrogenated thin film solar cell stress-free.
Highlights
Amorphous (a-Si:H) and microcrystalline silicon thin films are already widely used in microelectronics and solar cell technology
Among the materials used for thin film solar cells, amorphous silicon is the most important material in the commercial production [1]
The transient thermoelectric voltages have been recorded at pressures between 0 and 9 bar for the hot wire chemical vapor deposition (HWCVDs) a-Si:H sample on glass substrate
Summary
Amorphous (a-Si:H) and microcrystalline silicon (μc-Si:H) thin films are already widely used in microelectronics and solar cell technology. Their application in thin film solar cells promises considerable cost reduction as a result of low material consumption and low-temperature process as well as the possibility of a monolithic series connection of cells [1, 2]. Assuming a strong cohesion between thin film and substrate, we can create expansion or compression via concave or convex bending of the substrate Few such experiments have been reported [3, 4], and even these results are somewhat inconclusive. The bond distance changes in turn are supposed to strongly influence the activation and mobility of the H-atoms They are expected to partially reposition under bending pressure. We combine the TTE-flash method with the application of bending pressure
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