Abstract
Boron carbide films have been deposited on n-type crystalline silicon substrate by hot wire chemical vapor deposition technique using ortho-carborane precursor. The deposited films have been characterized by secondary ion mass spectrometry for their isotopic study which shows the presence of 10B in the film making them suitable for thermal neutron absorber application. These films have a p-type semiconducting nature and hence can be employed to form a p-n junction with n-type silicon. We have demonstrated for the first time the formation of a p-n junction with films deposited by hot wire chemical vapor deposition technique. The current–voltage characteristics of the diode have been measured and the characteristics show low leakage current (nA) in the reverse bias condition. From capacitance–voltage study, it is observed that the depletion width is of the order of few microns which is sufficient for detection of alpha particle released by 10B in the n, α reaction. The results of this study indicate that hot wire chemical vapor deposited boron carbide/crystalline silicon diode could be used as a compact device for thermal neutron detection.
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