Abstract
The beneficial effect of yttrium ion implantation on the oxidation behavior of zircaloy-4 at 500°C has been investigated. Zircaloy-4 specimens were implanted by yttrium ions with a dose range from 1×10 16 to 1×10 17 ions/cm 2 at about 120°C, and then oxidized in air at 500°C for 100 min. The valence of the oxides in the scale was analyzed by X-ray photoemission spectroscopy (XPS). Glancing angle X-ray diffraction (GAXRD) was employed to examine the phase transformation due to the yttrium ion implantation in the oxide films. The addition of yttrium changed the phase in the scale from monoclinic zirconia to tetragonal zirconia. The measurement of weight gain showed that a significant improvement was achieved in the oxidation behavior of yttrium ion implanted zircaloy-4 compared with that of the as-received zircaloy-4. The mechanism of the improvement was discussed.
Published Version
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