Abstract
Graphene has attracted wide interest across a range of applications due to its electrical, mechanical and optical properties. The use of a low-cost, table-top chemical vapour deposition system to deposit few-layer graphene onto copper is reported in this work. Characterisation of the graphene is performed using Raman spectroscopy and atomic force microscopy. The results show that few-layer graphene can be deposited at 1000 °C using CH4 as a carbon precursor, and 5% H2, 95% N2 forming gas as a diluent. The effects of deposition temperature, deposition time, and forming gas addition on graphene film quality was studied experimentally. An increase in graphene quality was observed when forming gas was added during deposition.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
