Abstract
A simple and low temperature approach has been used for the deposition of manganese oxide (MnO2) film and nanoparticles on silicon nanowires (SiNWs). Firstly, SiNWs were grown using hot wire chemical vapour process (HWCVP) technique via Vapor-Liquid-Solid (VLS) mechanism using Sn as a catalyst and then electrophoretic deposition method (EPD) was used to deposit MnO2 on them. Since SiNWs have good electron transportation and high aspect ratio, the role of SiNWs is thus for improving the electrical conduction and the surface area for MnO2 for its application in a desired form. First the deposition parameters were optimized on a transparent conductive oxide (TCO) coated glass substrate to control the thickness of the MnO2 film and then it was synthesized on SiNWs. The deposition of MnO2 has been confirmed by FEG-SEM and EDX. This structure of MnO2-SiNWs could be useful for various applications.
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