Abstract
The development of PC based Rapid Thermal Chemical Vapour Deposition (RTCVD) system for thin film depositions and annealing is reported. The RTCVD system was built, indigenously, using high intensity linear tungsten halogen lamps as heating source. The temperature and simultaneous control of four reactive gases are achieved through a PC. A software has been developed to control and monitor temperature uniformity within ± 2°C with negligible overshoot/undershoot. The system is capable of handling silicon wafer up to 6” diameter. Low pressure CVD capability of the system make it suitable for sequentlial thin films depositions. In this paper, high temperature growth of very thin Si02 film using tetraethylorthosilicate (TEOS) and oxygen is reported.
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