Abstract
The rapid growth of the advanced technologies in power electronics system gives a challenge to the electronic device to sustain with the modern technologies nowadays. The challenges are also including the place where the system was installed for example the application in the harsh environment. Harsh environment application requires an electronic device deals with radiation pollution. Hence, the electronic device will suffer from this phenomenon and make the whole system to malfunction and break down. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one type of electronic device that is the most broadly for high voltage and high switching speed application. The aim of this paper is to studies the photon radiation effect toward the Power MOSFET performance. The study focus on the changing of the electrical characteristics of the device after radiated with photon radiation. Process simulation and Device simulation tools in Sentaurus Synopsys Software used for the research to validate all the theory.
Highlights
The implementation of Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in harsh environment application has exposed the device to radiation pollution
The implementation of Power MOSFET in harsh environment application has exposed the device to radiation pollution
There is a lot of pollution in this place and this is very critical for all electronic device to operate normally
Summary
The implementation of Power MOSFET in harsh environment application has exposed the device to radiation pollution. Particle radiation have a mass and energy while photon radiation does not mass have but still will affect the electronic device if the range of ionization is enough to make the device to malfunction [2]. The effect of radiation on power electronic devices that can be categorized into two type; cumulative effect and Single Event Effect (SEE). SEE is the effect that instantaneously happened once radiation particle emitted to the device if the amount of radiation is enough to make the device degradation [3]. The main issue in this scenario is the changing of device behavior once the device was introduced to radiation pollution will affect the whole power electronic system. This paper will investigate the effect of photon radiation on Power MOSFET by using gamma-ray radiation mechanism
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