Abstract
In this paper, a lateral trench power metal oxide semiconductor field effect transistor (MOSFET) on InGaAs with voltage and on-resistance, we proposed a new power MOSFET the gate placed in a trench to provide conduction of drain to source current in the bulk of drift region. Another trench in the proposed structure is used to enhance reduced-surface-field (RESURF) effect in order to improve the breakdown voltage of the device. Two dimensional numerical simulations have been performed to analyse and compare the performance of the proposed device with the conventional lateral MOSFET. The proposed device exhibits 4.4 times higher breakdown voltage leading to 4 times improvement in the figure of merit as compare to conventional power MOSFET.
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