Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

Erman Azwan Yahya,Lini Lee,Ramani Kannan

doi:10.11591/eei.v8i4.1611

Abstract

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

Highlights

The development of advanced technology in power electronic application nowadays has influenced the electronic devices to be updated
First part provides the topology of radiation incident on the Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device
Radiation incident on the power MOSFET device The implementation of Power MOSFET device in harsh environment application has exposed the device to withstand with various kind of the radiation type

Summary

Introduction

The development of advanced technology in power electronic application nowadays has influenced the electronic devices to be updated. The doping and thickness of the N epitaxial layer determine the voltage rating of the transistor, while the channel width will determine the current rating This makes this device practicable to be installed in both high blocking voltage and high current within a compact piece of silicon [3]. Due to this advantages, most of the vertical MOSFET was designed for switching applications and they are used in both on-state and off-states [4,5,6,7,8,9,10]

Objectives

Results

Conclusion