Abstract
The effects of adding Zr into solution-processed InZnO (IZO) thin-film transistors (TFTs) were investigated with varying Zr content. ZrInZnO (ZIZO) TFTs showed a lower off-current and a sharper subthreshold swing than IZO TFTs. The addition of Zr plays a role in reducing the oxygen vacancies, and thus effectively decreases the carrier concentrations of the ZIZO active layer. The characteristics of various DC bias stresses are provided and discussed to evaluate the reliability of ZIZO TFTs. After 1000 s of various DC bias stresses, although the threshold voltage may shift dramatically, variations in subthreshold swing are negligible.
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