Abstract
Electrical characteristics of the InZnO (IZO) thin-film transistor (TFT) using solution process were improved via vacuum annealing and N2 pressure treatment (PT) at 200 °C. Especially, the PT reduced the IZO film thickness and enhanced the IZO film density. It reduced the trap sites at the interface of IZO/gate insulator and those in the IZO bulk. Therefore, the PT IZO TFT exhibited a higher mobility of 4.44 cm2 V−1 s−1 and a steeper subthreshold swing of 0.79 V/decade than non-PT IZO TFT. The improvement of hysteresis on the PT IZO TFT was also observed.
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