Abstract
Abstract Resistive random access memories (ReRAMs) based on an organic-metallic hybrid polymer, Poly(Fe-btpyb) Purple, were fabricated. This material was synthesized by complexation of metal ion and organic ligand. When applying forward bias, an abrupt resistance change from a low resistance state (LRS) to a high resistance state (HRS), which is known as reset process, was observed. In contrast, a reverse bias switched the resistance from HRS to LRS (set process). The resistive switching phenomenon is probably caused by the electrochemical oxidation-reduction reaction of the metal ion (Fe(II)/Fe(III)). The nonvolatile memory characteristics were measured with data-retention tests, showing no significant degradation over 105 s. The endurance characteristics exhibited sufficient long-term durability, due to no conformational change of the organic ligand. It is proposed that the difference in charge-transfer efficiency between the reduced state (Fe(II)) and oxidized state (Fe(III)) might be the physical mechanism of the resistive switching.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.