Abstract
In this study, we fabricated Hf-doped indium zinc oxide thin-film transistors (HIZO TFTs) using a solution process. Channel layers of the TFTs were optimized by varying the molar ratio of Hf in the channel layers. The electrical properties of the fabricated devices were compared to gallium indium zinc oxide (GIZO). HIZO TFTs showed 0.12 V threshold voltage, 0.45 V/decade subthreshold swing and 1.24 × 106 on-off current ratio, which were excellent compared to that of GIZO. In particular, when a positive gate bias stress of 10 V was applied for 10³ s, the HIZO TFT exhibited a lower threshold voltage shift of 1.11 V than the GIZO TFT (1.88 V). These results originate from the higher oxygen bonding with Hf in IZO compared to Ga atoms. We confirmed that Hf acts as an excellent carrier suppressor whose properties exceed those of Ga.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
