Effect of Dynamic Bias Stress (AC) In Short-Channel (L=1.5μm) p-Type polycrystalline Silicon (poly-Si) Thin Film Transistors (TFTs) on the glass substrate

Abstract

ABSTRACTWe have investigated the stability of short channel (1.5μm) p-Type polycrystalline silicon (poly-Si) Thin Film Transistors (TFTs) on the glass substrate under AC bias stress. The variation of threshold voltage in short channel poly-Si TFT was considerably higher than that of long channel poly-Si TFT. Threshold voltage of the short channel TFT was considerably moved to the positive direction during AC bias stress, whereas the threshold voltage of a long channel was rarely moved. The variation of threshold voltage in the short channel p-type TFT under AC bias stess was more compared to that under DC bias stress. The threshold voltage of short channel (L=1.5μm) poly-Si TFT was increased about -7.44V from -0.305V to -7.745V when VGS = 5 (base value) ~ -15V (peak value), VDS = -15V was applied for 3,000 seconds. This positive shift of threshold voltage and significantly degraded s-swing value in the short channel TFT under dynamic stress (AC) may be due to the increase of the stress-induced trap state density at gate insulator / channel interface region.