Study on Electrical Characteristics of Double gate Junctionless Field Effect Transistor With Triangle Shaped Spacer

Anjanmani Baro,Kaushik Chandra Deva Sarma

doi:10.1109/compe49325.2020.9200147

Study on Electrical Characteristics of Double gate Junctionless Field Effect Transistor With Triangle Shaped Spacer

Anjanmani Baro, Kaushik Chandra Deva Sarma

https://doi.org/10.1109/compe49325.2020.9200147

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Publication Date: Jul 1, 2020

Citations: 1

Affiliation: Central Institute of Technology Kokrajhar

#Gate Junctionless Field Effect Transistor #Double Gate Junctionless Field Effect + Show 8 more

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Abstract

A simulation study on electrical characteristics of a Double gate Junctionless field effect transistor (JLFET) with triangle shaped spacer is reported. The structure consists of a spacer of the shape of a triangle extended upto the source and drain ohmic contacts. A simulation study on electrical performance has been done in COGENDA VisualTCAD 2-D Device Simulator 1.8.2 platform. The study shows that the use of spacer in triangle shape enhances Ion/Ioff ratio and subthreshold slope compared to a conventional JLFET.

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