Abstract
A simulation study on electrical characteristics of a Double gate Junctionless field effect transistor (JLFET) with triangle shaped spacer is reported. The structure consists of a spacer of the shape of a triangle extended upto the source and drain ohmic contacts. A simulation study on electrical performance has been done in COGENDA VisualTCAD 2-D Device Simulator 1.8.2 platform. The study shows that the use of spacer in triangle shape enhances Ion/Ioff ratio and subthreshold slope compared to a conventional JLFET.
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