Effect of gate misalignment on the performance of rectangular core-shell based junctionless field effect transistor

Abstract

The Performance of gate misaligned N-type conventional double gate junctionless field effect transistor (JLFET)and N-type rectangular core-shell (RCS) based JLFET is studied. The misalignment of the gate is studied towards the source side. The performance parameters analyzed are ON current, OFF current, ON/OFF current ratio, Subthreshold slope and threshold voltage. These “Figure of Merits” are compared with the conventional double gate junctionless transistor under same conditions of gate misalignment. The proposed RCS based structure exhibits superior performance under perfectly aligned gate condition and is less sensitive to the effect of gate misalignment as compare to conventional JLFET. It is shown that RCS based double gate junctionless FET has the tolerance limit of 50% gate misalignment whereas conventional structure does not offer the flexibility to gate misalignment.