Doping engineering to enhance the performance of a rectangular core shell double gate junctionless field effect transistor

Abstract

This paper describes different architectures of a rectangular core shell double gate junctionless field effect transistor (RCS-DGJLT). The device performance has been studied when the core has either the same or opposite type of doping to the shell. It is found that an RCS-DGJLT with an oppositely doped core without heavily doped source/drain (S/D) extension regions exhibits an OFF current of ~10−14A and an ON current of ~10−5A. In addition, an RCS-DGJLT with heavily doped S/D extension and different placements of dopant concentration in the shell and core region is explored, so that control of charge carriers in the device during the ON and OFF states can be achieved. Further, the ON current is enhanced by doping engineering in the shell and core region without significantly degrading the OFF current. The RCS-DGJLT with heavily doped S/D extension along with oppositely doped core exhibits an OFF current of ~10−12A and an ON current of ~10−4A. The performance parameters such as the OFF current, ON current, ON/OFF current ratio, subthreshold slope, threshold voltage and transconductance are calculated. The performance of the proposed RCS-DGJLT fused with doping engineering is compared with previously published results on a DGJLT integrated with technology boosters from the literature, and is found to have superior performance to its counterparts.