Effect of gate oxide thickness on the performance of rectangular core-shell based junctionless field effect transistor

Abstract

The performance of p and n-type rectangular core shell double gate junctionless field effect transistor (RCS_DGJLT) on varying oxide thickness is studied. The oxide thickness plays a vital role to achieve good gate capacitance. The impact of oxide thickness on short channel effects is also studied. The oxide thickness is varied from 0.5nm to 2nm in both p and n-type RCS-DGJLT. The impact on the device performance on increasing the oxide thickness is observed to be almost same for both the types of device. The performance of the devices is analyzed on the basis of different parameters like OFF current, ON current, ON/OFF current ratio, subthreshold slope and threshold voltage. It is observed that oxide thickness of 1nm gives better performance for n-type and p-type RCS-DGJLT at channel length of 20nm. Further, a comparison is shown between conventional DGJLT (no core) with RCS-DGJLT (with core=4nm). The RCS-DGJLT exhibits an excellent device performance on the basis of performance parameters.