An Analytical Potential Model for Normally on Double Gate Junctionless Field Effect Transistor

Abstract

One of the most important parameter of a device is electrostatic potential. A fully analytical potential model shown the distribution of electrostatic potential in a Normally on Double gate Junctionless field effect transistor is presented. In a normally on device work function of gate is lower than that of channel. A negative gate potential is applied to create a depletion layer underneath the gate region to turn the device on. The potential expression is derived from solution of Poisson's equation while considering that flat band voltage is zero. The potential expression in the channel region and source-drain regions are obtained separately. The validation of the model obtained is done with comparison to simulation results obtained from Cogenda VisualTCAD 2-D device simulator. The results obtained from the analytical potential model closely matches with TCAD simulation results. As the model is fully analytical in nature it helps in reducing the computational time.