Abstract
The distribution of tellurium concentration in 〈111〉GaSb single crystals grown using the Czochralski method without encapsulant in an atmosphere of flowing hydrogen was studied. No facets were formed in undoped GaSb, while in the case of Te-doped crystals the facets have appeared at the centre of the GaSb bowl. The formation of facets is dependent on the temperature conditions in the growth surface (its shape) and on the level and the nonhomogeneity of dopant concentration near to the growth interface. It follows that it is difficult to grow single crystals which would have a homogeneous concentration of tellurium in the grown plane of 〈111〉 GaSb.
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