Abstract
GaSb single crystals (undoped and doped with indium, tellurium and nitrogen) were grown using the Czochralski technique without encapsulant in an atmosphere of flowing hydrogen and studied for etch pit density (EPD). It was found that dopants showed no influence on the average EPD in grown crystals because of the very low temperature gradients (about 35 K cm −1) in our furnace. For undoped, Te- and In-doped GaSb the EPD profiles showed a rapid decrease along the growth direction, while that in the case of N-doped crystals increased. It is possible to explain this behaviour of N-doped crystals on the basis of the development of stresses close to the solidification interface due to the increased nitrogen volatilization during the growth. The EPD in the middle portion of all the crystals investigated was of the order of 10 0–10 1 cm −2.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call