Abstract
GaSb single crystals were grown by the vertical Bridgman technique. The distributions of the dislocation density along the diameter and the length of the ingot were studied. The average etch pit density was found to be 1.57 × 10 5cm −2, the lowest value reported so far for Bridgman grown crystals. The variation of electrical properties was also studied along the diameter and the length of the crystal. The resistivity was found to vary from 0.051 to 0.064 Ω cm.
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