Abstract
A novel hybrid copper paste was developed for low temperature sintering of bare semiconductors. Cu(II) formate (Cu(for)) is complexed in amino-2-propanol (A2P) and added to a paste of etched brass micro flakes. A two-step sintering process is applied: The paste is printed and dried at 120 °C under formic acid (FA) enriched N2 atmosphere (FAN2) for 5 min. Afterwards, bare semiconductors are placed and sintered at 250 °C for 5 min applying a bonding pressure of 20 MPa/10 MPa. By the thermal decomposition of the Cu(for) atomic Cu is released and forms in-situ Cu-nanoparticles. An interconnect is realized with shear strength >100 MPa.
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