Abstract
GaSb single crystals doped with nitrogen and indium were grown using the Czochralski method without encapsulant in a flowing atmosphere of hydrogen and were studied for etch pit density (EPD) and Hall mobility. It has been found that the dopants had no influence on the average EPD in the GaSb crystals. However, EPD profiles of undoped and In-doped GaSb showed a decrease along the growth direction (from the beginning to the end of the crystals), while the EPD profile of N-doped crystals showed a sharp increase. This behaviour of N-doped crystals can be explained by the development of stresses near the solidification interface, as a result of nitrogen volatilization during growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
