Electron microscopic investigation of the nature of the dislocation loops created by electron irradiation (2MeV) between room temperature and 350°C in GaSb single crystals

B Legros-De Mauduit,A Lasserre,F Reynaud,A Katsui

doi:10.1016/0036-9748(84)90263-1

Electron microscopic investigation of the nature of the dislocation loops created by electron irradiation (2MeV) between room temperature and 350°C in GaSb single crystals

B Legros-De Mauduit, A Lasserre + Show 2 more

https://doi.org/10.1016/0036-9748(84)90263-1

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Journal: Scripta Metallurgica	Publication Date: Sep 1, 1984
Citations: 2

Affiliation: Université Toulouse III - Paul Sabatier, Laboratoire d'Optique Appliquée, NTT (Japan)

#GaSb Single Crystals #Influence Of Electron Irradiation + Show 8 more

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Abstract

This paper investigates the effects of 2 MeV electron irradiation on undoped GaSb (B3 structure) single crystals between room temperature and 350 degrees C. Previoiusly, the influence of electron irradiation on GaSb has not been observed in situ inside a high voltage electron microscope. The accelerating voltage chosen for this experiment 2 MV, is considerably higher than the threshold voltages for Ga and Sb displacements.

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