Stability and Power Analysis of Read Decoupled 8T SRAM Cell

Abstract

Stability and power consumption in the circuit are the major column of any SRAM cell idolization. In this paper, a read decoupled 8T SRAM cell has been implemented and compared with conventional 6T SRAM and Differential 8T SRAM cell, analyzed on 45 nm technology with Cadence virtuoso tool. It has been observed that read stability and write ability of considered cell is improved by 1.4× and 1.02 × in comparison of conventional 6 T SRAM cell while 1.7× and 1.07× with respect to Differential 8T SRAM cell. The read delay and write delay of read decoupled 8 T SRAM cell is 46.40% and 29% better in comparison of conventional 6T SRAM cell. Additionally, the read power of 8T SRAM cell is reduced by a factor of 55% as comparison of conventional 6T at 1 V supply voltage.