Abstract
The ultra-high breakdown voltage behavior of a thin-film SOI LDMOS device with a variation in the lateral doping (VLD) of drift region is analyzed extensively by TSuprem4 and Medici. The on/off state resistance and breakdown voltage depending on device parameters including drift region length, doping density gradient, and gate field plate length are examined thoroughly. The process figure of merit (FOM) has shown excellent result for devices with the optimum linearly doped drift region ranging from 30μ to 60μ. The safe operating area (SOA) for drain source current versus on-state breakdown voltage for a 60μ drift region is also presented.
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