Analysis of lateral IGBT with a variation in lateral doping drift region in junction isolation technology

Abstract

This brief demonstrates the measured and simulated performance of a high-voltage junction-isolated lateral insulated-gate bipolar transistor (LIGBT) with a variation in lateral doping (VLD) drift region. Both experimental and simulation results show that significant advancements in breakdown voltages (BVs) and latch-up current densities can be obtained using this technology without compromising the forward voltage drop. The results validate that a VLD drift region can achieve the required BV with smaller drift region lengths, in comparison to conventional LIGBTs using uniform drift region technology, and that the VLD drift region technology enhances the safe operating area