Abstract
The performance of a high-voltage lateral insulated gate bipolar transistor (LIGBTs) with segmented n+p/n anode fabricated in junction isolation technology is experimentally investigated at both room and elevated temperatures. Detailed two dimensional numerical modeling of a vertical representation of the structure shows that significant electron current passes through the n/sup +/p/n segment of the anode region during the on-state and when devices are subjected to clamped inductive switching. It is shown that the magnitude of electron current can be controlled by modifying the p-base charge which enables enhancement of the turn-off loss/forward voltage drop tradeoff in comparison to conventional LIGBTs.
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