Abstract
This paper introduces a novel dual-channel silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT). The reliability has been compared between conventional SOI LIGBT and dual-channel SOI LIGBT. Experiments show that the dual-channel SOI LIGBT leads to a significant improvement in the reliability. That is, the improved latch-up characteristic, and the improved hot-carrier-induced reliability. Moreover, the current carrying capability of dual-channel SOI LIGBT is better than conventional SOI LIGBT.
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