Abstract
To improve latch-up and forward voltage drop properties of the silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT), a new dual-channel structure is proposed and fabricated in this paper. The dual-channel structure is employed to enable more electrons to flow into the n-drift layer and improve the latch-up characteristic. This dual-channel SOI LIGBT results in significant improvement in latch-up current density. Simulated results indicate that the latch-up current density is improved by 4 times compared to that of the conventional SOI LIGBT. The dual-channel SOI LIGBT's were fabricated using a high voltage CMOS fabrication process.
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