Abstract
In this paper, we present a novel Lateral Insulated-Gate Bipolar Transistor(LIGBT) structure. The proposed structure has extra emitter between emitter and collector of the conventional structure. The added emitter can significantly improve latch-up current densities, forward voltage drop (Vce,sat) and turn-off characteristics. From the simulation results, the proposed LIGBT has the lower forward voltage drop(1.05V), the higher latch-up current densities(), and the shorter turn-off time(7.4us) than those of the conventional LIGBT.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have