Abstract
The silicon on insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is a popular choice in smart integrated circuit (IC) applications. An isothermal model valid for both thin and thick SOI LIGBTs was recently reported by us. In this paper, the authors formulate the well known thin silicon thermal conductivity reduction to the device model and extend it to include the package thermal behaviour. In the process the thermally important layers of the packaging and their impact on the device, both on electrical and thermal behaviours are identified. The resulting compact, physics based, scalable, fully coupled self-heating model is verified through numerical simulations and experimental data
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