Trench emitter IGBT with lateral and vertical MOS channels

Abstract

A dual gate trench emitter IGBT structure with lateral and vertical MOS channels is proposed and studied numerically using the MEDICI device simulator. The on-state forward voltage drop, latch-up current density, turn-off time and breakdown voltage of the proposed structure are compared with those for the conventional DMOS-IGBT and trench gate IGBT (TIGBT) structures. Reduction of the on-resistance by at least 32% is obtained in the proposed structure due to enhancement of the carrier density at the edge of the drift region by increasing electron current through both channels. In addition, the trench emitter of the proposed structure increases latch-up current density by 148% in comparison with that for the conventional DMOS-IGBT and by 83% compared with that for the trench gate IGBT without degradation in breakdown voltage, leading to a broad SOA (safe operating area).