Silicon-on-insulator optical intensity modulator based on waveguide-vanishing effect

Abstract

A silicon-on-insulator (SOI) optical intensity modulator has been proposed and fabricated, and is based on the large cross-section singlemode rib waveguide condition, the waveguide-vanishing effect and the free-carrier plasma dispersion effect. In the modulator the SOI technique uses silicon and silicon dioxide thermal bonding and back-polishing. The insertion loss of the device is measured to be 3.65 dB at a wavelength of 1.3 µm. The modulation depth is 96% at an injection current of 45 mA. Response time is ~160 ns.