Abstract
Mach–Zehnder (MZ) waveguide interferometers integrated on SOI (silicon on insulator) for 1.3 μm operation are studied on the basis of the large cross-section single-mode rib waveguide condition and the free-carrier plasma dispersion effect in Si wafer direct bonding SOI by back-polishing. And the MZ interferometers are fabricated by using KOH anisotropic etching. Their insertion losses and modulation depths are measured to be 4.81 dB and 98%, respectively, at the wavelength of 1.3 μm when a forward bias voltage applied to a p+n junction is 0.95 V and the active zone length of the MZ interferometers is 816.0 μm.
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