Abstract
A silicon-on insulator (SOI) zero-gap directional coupler switch is studied based on the large-cross-section singlemode rib waveguide condition, the dual-mode interference principle, and the free-carrier plasma dispersion effect, in which the SOI technique uses silicon and silicon dioxide thermal bonding and backpolishing. The SOI is fabricated by potassium hydroxide anisotropic etching. Its insertion loss and cross talk are measured to be less than 4.81 dB and 218.6 dB, respectively, at a wavelength of 1.3 microm and a switching voltage of 0.91 V. Response time is ~210 ns.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
