Abstract
Based on the large cross-section single-mode rib waveguide condition, the total internal reflection and the free-carrier plasma dispersion effect, a silicon-on-insulator (SOI) 2 × 2 symmetric optical waveguide switch with a transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at the wavelength of 1.3 μm. It shows that the crosstalk and insertion loss are less than - 18.1 and 4.8 dB, respectively, at an injection current of 60 mA, and response time is 110 ns.
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