Shallow beryllium implantation in GaAs annealed by rapid thermal annealing

Abstract

Very shallow (40 nm) ion implants of Be in GaAs have been annealed with no noticeable redistribution using rapid thermal annealing (RTA). Differential Hall effect measurements, Raman Scattering, and spectroscopic ellipsometry have shown that a peak concentration of 3×1019 cm−3 is achieved, with an electrical activation of 80% and crystalline quality similar to unimplanted material. These results are interpreted in terms of diffusing (interstitial) atoms gettered by defects not yet annealed when electrical activation occurs in the RTA process.