Abstract

Limited by the severe surface recombination and large bandgap, it is still a challenge to achieve a high-performance broad-spectrum photodetector based on CdS nanowires (NWs). In this work, the CdS/GeS core–shell heterostructure is constructed to enhance and broaden the photoresponse of CdS NWs. The CdS/GeS core–shell heterostructure NWs are prepared by the chemical vapor deposition method, exhibiting smooth surfaces, controlled shell thicknesses, and compositions. From the UV-Vis-near-infrared (NIR) diffuse reflectance spectrum, PL, and time-resolved photoluminescence studies, it is found that the surface recombination is weakened and the light absorption range is widened after the constructing core–shell heterostructure. When configured into photodetectors, the responsivity of the CdS/GeS core–shell heterostructure NWs is up to 76.8 A W−1, which is 10 folds higher than that of pristine CdS NWs. Furthermore, the photoresponse wavelength of the CdS/GeS core–shell heterostructure NWs is extended from 405 to 850 nm. The improved photodetection performance is attributed to the effective separation of photogenerated carriers at the heterostructure interface, weakened surface recombination, and excellent light absorption of the GeS shell. All results imply that constructing core–shell heterostructures is an effective strategy for constructing high-performance photodetectors.

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