Abstract
The formation of an InGaAs quantum well on nanoscale InP islands by selective growth using metalorganic vapor phase epitaxy is demonstrated. The structures show intense low-temperature photoluminescence at 1.35 eV. The blueshift of the emission peak by increasing the excitation intensity suggests that the carriers are three-dimensionally confined. The insertion of quantum well into the islands allows a better control of the properties of structures fabricated by the self-organizing growth, a novel technique to realize nanoscale structures without using any lithographical process steps.
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